Pushing forward with compound semiconductor technologies
نویسنده
چکیده
rapidly, with many new achievements and records reported by research groups at the 2017 Symposium on VLSI Technology and Circuits in Kyoto, Japan (5–9 June). Most of the reported work involved indium gallium arsenide (InGaAs), particularly integrated with silicon (Si) substrates aiming for low-cost mass production. We report here on those sessions, along with research aimed at gallium nitride (GaN) devices for high-power switching applications.
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